Model name: SAMSUNG 990 EVO PLUS

Specification :

• Form Factor M.2 (2280)
• Interface PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
• Storage Memory Samsung V-NAND TLC
• Controller Samsung in-house Controller
• Cache Memory HMB (Host Memory Buffer)
• RIM Support Supported
• S.M.A.R.T Support Supported
• GC (Garbage Collection) Auto Garbage Collection Algorithm
• Encryption Support AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
• WWN Support Not supported
• Device Sleep Mode Support Yes
• Sequential Read Up to 7,150MB/s*
• Sequential Write Up to 6,300MB/s*
• Random Read (4KB, QD32) Up to 850,000 IOPS* Performance may vary based on system hardware & configuration
• Random Write (4KB, QD32) Up to 1,350,000 IOPS* Performance may vary based on system hardware & configuration
• Average Power Consumption (system level) Average: Read 4.3 W / Write 4.2 W* Actual power consumption may vary depending on system hardware & configuration
• Power consumption (Idle) Typical 60 mW* Actual power consumption may vary depending on system hardware & configuration
• Power Consumption (Device Sleep) Typical 5 mW* Actual power consumption may vary depending on system hardware & configuration
• Allowable Voltage 3.3 V ± 5 % Allowable voltage
• Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
• Operating Temperature 0 - 70 ℃ Operating Temperature
• Shock 1,500 G & 0.5 ms (Half sine)