Model Name: SAMSUNG 990 EVO NVMe

Specification :

• Form Factor: M.2 (2280)
• Interface: PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
• Storage Memory: Samsung V-NAND TLC
• Controller: Samsung in-house Controller
• Cache Memory: HMB (Host Memory Buffer)
• Special Features:
  • TRIM Support: Supported
  • S.M.A.R.T Support: Supported
  • GC (Garbage Collection): Auto Garbage Collection Algorithm
  • Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
  • WWN Support: Not supported
  • Device Sleep Mode Support: Yes
• Performance:
  • Sequential Read: Up to 5,000 MB/s
  • Sequential Write: Up to 4,200 MB/s
  • Random Read (4KB, QD32): Up to 680,000 IOPS
  • Random Write (4KB, QD32): Up to 800,000 IOPS
  • Random Read (4KB, QD1): Up to 20,000 IOPS
  • Random Write (4KB, QD1): Up to 90,000 IOPS
• Environment:
  • Average Power Consumption (system level): *Average: Read 4.9 W / Write 4.5 W* Actual power consumption may vary depending on system hardware & configuration
  • Power consumption (Idle): Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration
  • Power Consumption (Device Sleep): Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration
  • Allowable Voltage: 3.3 V ± 5 % Allowable voltage
  • Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
  • Operating Temperature: 0 - 70 ℃ Operating Temperature
  • Shock: 1,500 G & 0.5 ms (Half sine)